New 0.3-10.6 GHz switch combines 95 nA current consumption, low insertion loss, high isolation, and 100 ns switching

Debuts at Electronica 2026 in the Murata booth #C4-179

pSemi^®Corporation, a Murata company specializing in semiconductor integration and advanced connectivity, today announced the PE423213, a HaRP™ technology-enhanced reflective single-pole double-throw (SPDT) RF switch operating from 0.3 to 10.6 GHz. Designed for ISM, WLAN, Wi-Fi, Bluetooth, and ultra-wideband (UWB) applications, the device combines broad frequency coverage with ultra-low current consumption and a compact footprint to address the needs of secure access control, smart-home automation, asset and personal tracking, indoor navigation, security and surveillance, wearables, and industrial IoT applications.

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PE423213 is a HaRP™ technology-enhanced reflective single-pole double-throw (SPDT) RF switch operating from 0.3 to 10.6 GHz.

Built on pSemi’s patented UltraCMOS+™ silicon-on-insulator (SOI) process, the PE423213 delivers broadband RF performance with a typical supply current of just 95 nA. Its compact 6-lead, 1.6 × 1.6 mm DFN package and extended operating-temperature range of −40°C to +105°C make it well suited for space-constrained, battery-powered, and temperature-sensitive, connected devices.

Key performance and design benefits of the PE423213 include:

• Broad frequency support: A single reflective SPDT switch covers 0.3 to 10.6 GHz supporting multiple wireless standards (ISM, WLAN, Wi-Fi, Bluetooth, and UWB), simplifying RF front-end design.
• Low insertion loss and high isolation: Typical insertion loss is 0.4 dB at 6 GHz, 0.5 dB at 8.5 GHz, and 0.7 dB at 10.6 GHz, with isolation of 28 dB, 25 dB, and 18 dB at the same respective frequencies.
• Ultra-low current consumption: Typical supply current is 95 nA helps extend battery life in power-sensitive applications
• Fast switching: A typical switching time of 100 ns supports responsive RF path selection
• Compact and robust design: The 1.6 x 1.6 mm DFN package, -40 to +105 °C operating range, and ESD rating of 2000V supports compact designs operating across a wide range of environments.

“Designers are increasingly challenged to support more wireless standards and frequency bands while reducing power consumption and board space,” said Xinliang “XL” Wang, Senior Director, Product Portfolio Management, pSemi. “The PE423213 combines broad frequency coverage, low insertion loss, high isolation, and fast switching with ultra-low current consumption in a compact UltraCMOS+ solution. We look forward to showcasing the device publicly for the first time at Electronica 2026 and discussing how it can simplify RF designs for secure access, tracking, smart-home automation, and industrial IoT applications.”

See the PE423213 at Electronica 2026

pSemi will showcase the PE423213 for the first time at Electronica 2026, taking place November 10-13, 2026, at Messe München in Munich, Germany. Visitors are invited to see the product and meet with pSemi representatives at the Murata booth in Hall C4, Booth #179 (C4-179) to learn more about its performance, target applications, and design-in support.

The PE423213 is supplied in 6-lead 1.6 × 1.6 mm DFN package under order code PE423213A-Z. The corresponding evaluation kit carries order code EK423213-01. Additional product and ordering information can be found at https://psemi.com/products/rf-switches/low-il-rf-switches/pe423213 or by contacting sales@psemi.com.

About pSemi

pSemi (formerly Peregrine Semiconductor) is a leader in semiconductor integration, offering high-performance RF, power management, analog and mixed-signal solutions. With decades of technology innovation, a strong IP portfolio and deep expertise in integration, pSemi supports applications across smartphones, infrastructure, computing, automotive, data centers, IoT, healthcare and more. pSemi is a wholly owned subsidiary of Murata Electronics North America, Inc., headquartered in San Diego with offices worldwide. For more information, visit www.psemi.com.

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“The PE423213 combines broad frequency coverage, low insertion loss, high isolation, and fast switching with ultra-low current consumption in a compact UltraCMOS+ solution,” said Xinliang “XL” Wang, Senior Director, Product Portfolio Management, pSemi.